Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Their specifications and the covers are available in following.Ībout the textbook: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Feel free to contact us if you have any questions.įirst product includes the textbooks for 2nd and 3rd editions. Please read all of explanations and detail exactly. The Solution Manuals and textbooks are sold separately. Solution Manual for Fundamentals of Modern VLSI Devices 3rd and 2nd Edition + Textbook for 3rd and 2nd Edition Author(s) : Yuan Taur, Tak H.
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